Non-contact measurement of memory cell threshold voltage

ABSTRACT

Methods, systems, and devices for non-contact measurement of memory cell threshold voltage, including at one or more intermediate stages of fabrication, are described. One access line may be grounded and coupled with one or more memory cells. Each of the one or more memory cells may be coupled with a corresponding floating access line. A floating access line may be scanned with an electron beam configured to set the floating access line to a particular surface voltage at the scanned bit line, and the threshold voltage of the corresponding memory cell may be determined based on whether setting the scanned bit line to the surface voltage causes a detectable amount current to flow through the corresponding memory cell.

CROSS REFERENCE

The present Application for Patent is a continuation of U.S. patentapplication Ser. No. 15/849,262 by Majumdar et al., entitled“Non-Contact Measurement of Memory Cell Threshold Voltage,” filed Dec.20, 2017, assigned to the assignee hereof, and is expressly incorporatedby reference in its entirety herein.

BACKGROUND

The following relates generally to operating a memory array and morespecifically to non-contact measurement of memory cell thresholdvoltage.

Memory devices are widely used to store information in variouselectronic devices such as computers, wireless communication devices,cameras, digital displays, and the like. Information is stored byprograming different states of a memory device. For example, binarydevices have two states, often denoted by a logic “1” or a logic “0.” Inother systems, more than two states may be stored. To access the storedinformation, a component of the electronic device may read, or sense,the stored state in the memory device. To store information, a componentof the electronic device may write, or program, the state in the memorydevice.

Various types of memory devices exist, including magnetic hard disks,random access memory (RAM), read only memory (ROM), dynamic RAM (DRAM),synchronous dynamic RAM (SDRAM), ferroelectric RAM (FeRAM), magnetic RAM(MRAM), resistive RAM (RRAM), flash memory, phase change memory (PCM),and others. Memory devices may be volatile or non-volatile. Non-volatilememory, e.g., FeRAM, may maintain their stored logic state for extendedperiods of time even in the absence of an external power source.Volatile memory devices, e.g., DRAM, may lose their stored state overtime unless they are periodically refreshed by an external power source.FeRAM may use similar device architectures as volatile memory but mayhave non-volatile properties due to the use of a ferroelectric capacitoras a storage device. FeRAM devices may thus have improved performancecompared to other non-volatile and volatile memory devices.

Some memory devices may include memory cells that exhibit a thresholdvoltage, and writing a state to the memory cell may include generating avoltage across the memory cell in excess of the threshold voltage.Devices and techniques for determining the threshold voltage of one ormore memory cells may be desired.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an example of an apparatus that supports non-contactmeasurement of memory cell threshold voltage in accordance withembodiments of the present disclosure.

FIG. 2 illustrates an example of a circuit that supports non-contactmeasurement of memory cell threshold voltage in accordance withembodiments of the present disclosure.

FIG. 3 illustrates an example of an I-V curve for a memory cell thatsupports non-contact measurement of memory cell threshold voltage inaccordance with embodiments of the present disclosure.

FIG. 4 illustrates an example of an apparatus that supports non-contactmeasurement of memory cell threshold voltage in accordance withembodiments of the present disclosure.

FIG. 5 illustrates an example of an apparatus that supports non-contactmeasurement of memory cell threshold voltage in accordance withembodiments of the present disclosure.

FIG. 6 illustrates an example of a process that supports non-contactmeasurement of memory cell threshold voltage in accordance withembodiments of the present disclosure.

FIG. 7 illustrates an example of a process that supports non-contactmeasurement of memory cell threshold voltage in accordance withembodiments of the present disclosure.

FIG. 8 illustrates a block diagram of a device that supports non-contactmeasurement of memory cell threshold voltage in accordance withembodiments of the present disclosure.

FIG. 9 illustrates a block diagram of a system including a testingmanager that supports non-contact measurement of memory cell thresholdvoltage in accordance with embodiments of the present disclosure.

FIGS. 10-12 illustrate methods for non-contact measurement of memorycell threshold voltage in accordance with embodiments of the presentdisclosure.

DETAILED DESCRIPTION

Designers and manufacturers of memory devices may wish to test variousaspects of their memory devices, for example, for quality controlpurposes or as part of the design process. For example, some memorydevices may include memory cells that exhibit a threshold voltage (Vth),and writing a state to the memory cell may include generating a voltageacross the memory cell that exceeds Vth. Testing of Vth for such memorycells may be desired to verify or refine device designs or devicefabrication processes. Some techniques for testing Vth may require thatfabrication of a memory device be complete prior to testing, which maydelay the acquisition of useful information and thus may increase designand manufacturing timelines and costs. Other techniques for testing Vthmay also require physically probing of a memory device with electrodes,which may be problematic for some device structures (e.g.,. structureswith small physical dimensions or intervening materials that inhibitaccess to memory cells).

The devices and techniques described herein may allow Vth for one ormore memory cells to be measured without contacting (e.g., physicallycontacting) a memory device with a physical probe, among otheradvantages. For example, the devices and techniques described herein mayallow Vth for one or more memory cells to be measured without the use ofspecialized contact structures for physical probes, such as bond pads.The devices and techniques described herein may also, for example, allowVth for one or more memory cells to be measured—which may includemeasuring variation in Vth among the one or more memory cells—at anintermediate fabrication step for a wafer (e.g., a fabrication step atwhich one or more access lines for the memory cells are exposed at anupper surface of the wafer), thereby reducing time to information forengineers and other personnel.

Further, the devices and techniques described herein may be suitable fordevice structures that are problematic (e.g., structures that are toosmall, too rough, have too many layers, or have layers with interferingcharacteristics) for one or more other Vth measurement techniques orlead to inaccurate results. The devices and techniques described hereinmay have benefits such as increasing reliability of memory devices,reducing design or manufacturing costs of memory devices, or reducingdesign or manufacturing time of memory devices, along with otherbenefits that may be appreciated by one of ordinary skill.

In some cases, Vth may represent a point in the current-voltage (I-V)curve of an element (e.g., a selection element or storage element)within a memory cell that corresponds to a detectable decrease incumulative resistance of the memory cell, beyond which current may passthrough the memory cell and configure the storage cell to store adesired state (e.g., a logic “1” or a logic “0”). For example, theelement within the memory cell may in some cases exhibit characteristicsof a snapback diode, and Vth may correspond to a snapback point (e.g.,point of negative resistance) on the I-V curve of the element. Thememory cell may be coupled with a first corresponding access line and asecond corresponding access line, and generating a voltage across thememory cell that exceeds Vth may comprise generating a voltagedifferential between the first corresponding access line and the secondcorresponding access line that exceeds Vth. For clarity, the firstcorresponding access line and the second corresponding access line maybe referred to herein as a word line and a bit line respectively, but anaccess line may serve as a word line for one memory cell and as a bitline for another memory cell, and the techniques described herein may beapplied to access lines generally.

In some cases, to facilitate non-contact testing of Vth for one or morememory cells, one word line may be grounded (e.g., coupled with a groundreference) and coupled with the one or more memory cells. For example,the grounded word line may be electrically coupled with a substrate of awafer (e.g., a silicon wafer), which may also be referred to as a bulkof the wafer, and the substrate of the wafer may serve as or may itselfbe coupled with the ground reference. The grounded word line may bedirectly coupled with the substrate (e.g., hardwired to the substratethrough a low-resistance connection), or the grounded word line may beindirectly coupled with the substrate through a driver circuit. In somecases, the driver circuit may have any number of transistors, diodes,resistors or other electrical components configured to allow current toflow in at least one direction between the grounded word line and thesubstrate.

Each of the one or more memory cells coupled with the grounded word linemay also be coupled with a corresponding floating bit line, and the oneor more bit lines may be scanned with an electron beam. The electronbeam may be configured to generate a voltage differential between ascanned bit line and the grounded word line by creating a surfacevoltage at the scanned bit line. Vth of a corresponding memory cell maybe determined based at least in part on setting the scanned bit line tothe surface voltage. For example, if setting the scanned bit line to thesurface voltage causes a detectable amount current to flow through thecorresponding memory cell, then Vth may be determined as less than thesurface voltage, and if setting the scanned bit line to the surfacevoltage does not cause a detectable amount of current to flow throughthe corresponding memory cell, then Vth may be determined as less thanthe surface voltage.

In some cases, image analysis may be utilized to determine whethersetting the scanned bit line to the surface voltage causes current toflow through the corresponding memory cell. For example, an electronbeam inspector (EBI) may use voltage contrasting techniques to determinewhether setting the scanned bit line to the surface voltage causescurrent to flow through the corresponding memory cell—e.g., a memorycell though which current flows when the corresponding bit line is setto the surface voltage may appear as having a first brightness (e.g.,being relatively bright in an EBI image) whereas a memory cell thoughwhich current does not flow when the corresponding bit line is set tothe surface voltage may appear as having a second brightness lower thanthe first brightness (e.g., being relatively dark in the EBI image).

Features of the disclosure introduced above are further described belowin the context of an example of an apparatus that includes a pluralityof memory cells for which Vth may be measured, with reference to FIG. 1,an example of a circuit that includes a single memory cell for which Vthmay be measured, with reference to FIG. 2, and an example of an I-Vcurve for a material that may be included within a memory cell for whichVth may be measured, with reference to FIG. 3. Additional specificexamples of apparatuses for non-contact measurement of Vth for one ormore memory cells are then described with reference to FIGS. 4 and 5,and specific examples of processes for non-contact testing of Vth arethen described with reference to FIGS. 6 and 7. These and other featuresof the disclosure are then further illustrated by and described withreference to apparatus diagrams, system diagrams, and flowcharts thatrelate to non-contact measurement of memory cell threshold voltage.

FIG. 1 illustrates aspects of an example apparatus 100 that supportsnon-contact measurement of memory cell threshold voltage in accordancewith various embodiments of the present disclosure. Apparatus 100 mayalso be referred to as a memory device or an electronic memoryapparatus. Apparatus 100 may include memory cells 105, word lines 110,and bit lines 115.

Memory cells 105 may be programmable to store different states. Forexample, each memory cell 105 may be programmable to store two states(e.g., a logic 0 or a logic 1). Alternatively, each memory cell 105 maybe configured to store more than two logic states.

According to the example of apparatus 100, each row of memory cells 105is connected to a single word line 110, and each column of memory cells105 is connected to a single bit line 115. Each memory cell 105 maycorrespond to a cross point of one word line 110 and one bit line 115,and apparatus 100 may be one example of a cross point architecture. Sucha cross point architecture may offer relatively high-density datastorage with lower production costs compared to other memoryarchitectures. For example, the cross-point architecture may have memorycells with a reduced area and, resultantly, an increased memory celldensity compared to other architectures. For example, the architecturemay have a 4F2 memory cell area, where F is the smallest feature size,compared to other architectures with a 6F2 memory cell area, such asthose with a three-terminal selection. For example, DRAM may use atransistor, which is a three-terminal device, as the selection componentfor each memory cell and may have a larger memory cell area compared toa cross point architecture

Operations such as reading and writing may be performed on a memory cell105 by activating or selecting (e.g., applying a voltage to) thecorresponding word line 110 and corresponding bit line 115 correspondingto the memory cell. Bit lines 115 may also be known as digit lines, and“access line” or “select line” may generically refer to either a wordline 110 or a bit line 115. Activating or selecting a word line 110 or abit line 115 may include applying a voltage to the respective line. Wordlines 110 and bit lines 115 may be made of conductive materials such asmetals (e.g., copper (Cu), aluminum (Al), gold (Au), tungsten (W),etc.), metal alloys, carbon, conductively-doped semiconductors, or otherconductive materials, alloys, compounds, or the like.

In the example depicted in FIG. 1, apparatus 100 includes one deck ofmemory cells 105 and may thus be considered a two-dimensional (2D)memory array; however, the number of decks is not limited. Athree-dimensional (3D) memory array may include multiple 2D memoryarrays formed on top of one another. This may increase the number ofmemory cells 105 that may be placed or created on a single die orsubstrate as compared with 2D arrays, which in turn may reduceproduction costs or increase the performance of the memory array, orboth. Memory device 100 may include any number of decks, and each deckmay be aligned or positioned so that memory cells 105 may beapproximately aligned with one another across each deck. Additionally,for example, decks in a 3D memory array may have common conductive linessuch that a single access line may function as a bit line 115 for memorycells 105 in a lower deck and as a word line 110 for memory cells in ahigher deck, or vice versa.

Various techniques may be used to form materials or components ofapparatus 100. These may include, for example, chemical vapor deposition(CVD), metal-organic chemical vapor deposition (MOCVD), physical vapordeposition (PVD), sputter deposition, atomic layer deposition (ALD), ormolecular beam epitaxy (MBE), among other thin film growth techniques.Material may be removed using a number of techniques, which may include,for example, chemical etching (also referred to as “wet etching”),plasma etching (also referred to as “dry etching”), orchemical-mechanical planarization.

Memory cells 105 may include one or more elements comprising variableresistance material. Variable resistance materials may refer to variousmaterial systems, including, for example, metal oxides, chalcogenides,and the like. Chalcogenide materials are materials or alloys thatinclude at least one of the elements sulfur (S), tellurium (Te), or Se.Many chalcogenide alloys may be possible—for example, agermanium-antimony (Sb)-tellurium alloy (Ge—Sb—Te) is a chalcogenidematerial. Other chalcogenide alloys not expressly recited here may alsobe employed.

Memory cells 105 may also be phase change memory cells. Phase changememory exploits the large resistance contrast between crystalline andamorphous states in phase change materials, which may be chalcogenidematerials. A material in the crystalline state may have atoms arrangedin a periodic structure, which may result in a relatively low electricalresistance (e.g., set state). By contrast, material in an amorphousstate may have no or relatively little periodic atomic structure, whichmay have a relatively high electrical resistance (e.g., reset state).The difference in resistance values between amorphous and crystallinestates of a material may be significant; for example, a material in anamorphous state may have a resistance one or more orders of magnitudegreater than the resistance of the material in its crystalline state. Insome cases, the amorphous state may have a threshold voltage associatedwith it and current may not flow until Vth is exceeded. In other cases,the material may be partially amorphous and partially crystalline, andthe resistance may be of some value between the resistances of thematerial in a wholly crystalline or wholly amorphous state. So amaterial may be used for other than binary logic applications—i.e., thenumber of possible states stored in a material may be more than two.

As explained in more detail with reference to FIG. 3, to set alow-resistance state, a memory cell 105 may be heated by passing acurrent through the memory cell 105. Heating caused by electricalcurrent flowing through a material that has a finite resistance may bereferred to as Joule or ohmic heating. Joule heating may thus be relatedto the electrical resistance of electrodes or phase change material.Heating the phase change material to an elevated temperature (but belowits melting temperature) may result in the phase change materialcrystallizing and forming the low-resistance state. The current mayresult from applying a voltage to the memory cell 105, where the appliedvoltage is based on Vth for the memory cell 105. For example, if thememory cell 105 is in a reset state, current may not flow through thememory cell 105 unless the applied voltage is greater than Vth.

As also explained in more detail with reference to FIG. 3, to set ahigh-resistance state, the phase change material may be heated above itsmelting temperature, for example, by Joule heating. The amorphousstructure of the molten material may be locked in by abruptly removingthe applied current to quickly cool the phase change material, which maybe known as “quenching.”

In some cases, apparatus 100 may be configured to facilitate non-contactmeasurement of Vth for one or more memory cells 105. As explained inmore detail below, one of the word lines 110 may be coupled with aground reference and other word lines 110 may be floating (e.g., notcoupled with the ground reference or with any other voltage source). Thebit lines 115 may also be floating. Thus, each memory cell 105 coupledwith the grounded word line 110 may be coupled with one floating bitline 115. As also explained in more detail below, the floating bit lines115 may then be scanned with an electron beam configured to set ascanned bit line 115 to a surface voltage, and Vth of the memory cells105 may be determined (e.g., evaluated or measured) based at least inpart on whether the corresponding bit line 115 becomes coupled with theground reference when scanned.

FIG. 2 illustrates an example of a circuit 200 that supports non-contactmeasurement of memory cell threshold voltage in accordance with variousembodiments of the present disclosure. Circuit 200 includes a memorycell 105-a, word line 110-a, and bit line 115-a, which may be examplesof a memory cell 105, word line 110, and bit line 115, respectively, asdescribed with reference to FIG. 1.

The memory cell 105-a may include a storage cell 205-a and a selectordevice 210-a. The storage cell 205-a and the selector device 210-a maybe arranged in series. The memory cell 105-a may be coupled with theword line 110-a and the bit line 115-a. In the example circuit 200, theselector device 210-a is coupled with the word line 110-a, and thestorage cell 205-a is coupled with the bit line 115-a. In otherexamples, the positions of the storage cell 205-a and the selectordevice 210-a may be switched, and the storage cell 205-a may be coupledwith the word line 110-a, and the selector device 210-a may be coupledwith the bit line 115-a.

The storage cell 205-a may be programmable to store one or more logicstates (e.g., a logic “1” or a logic “0”). In some cases, the storagecell 205-a may comprise a chalcogenide or phase change material, such asgermanium-antimony-tellurium (GeSbTe). For example, the storage cell205-a may comprise Ge₂Sb₂Te₅. The resistance of storage cell 205-a maydepend on whether it is in an amorphous or crystalline state, and one ofthe amorphous or crystalline state may correspond to a logic “1” whilethe other of the amorphous or crystalline state may correspond to alogic “0.” The storage cell 205-a may be switched from amorphous tocrystalline and vice versa—and thus a state may be written to the memorycell 105-a—by passing current through storage cell 205-a so as to heatstorage cell 205-a beyond melting temperature for a durationcorresponding to the desired state (e.g., amorphous or crystalline, as aduration beyond some threshold may result in crystallization). Heatingand quenching of the storage cell 205-a may be accomplished bycontrolling current flow through the memory cell 105-a, which in turnmay be accomplished by controlling the voltage differential between thebit line 115-a and the word line 110-a, as also explained in more detailin reference to FIG. 3.

The selector device 210-a may also comprise a chalcogenide or phasechange material, such as GeSbTe, and may in some cases compriseGe₂Sb₂Te₅. In some cases, the selector device 210-a may be maintained inan amorphous state and may behave like a snapback diode, as alsoexplained in more detail in reference to FIG. 3.

Further, although the example of circuit 200 shows memory cell 105-a ascomprising a storage cell and selector device 210 as two separateelements within the memory cell 105-a, the structures and techniquesdescribed herein may also be applied to memory cells 105 comprising onlya single element (e.g., a self-selecting storage element, a chalcogenideelement, or a threshold element).

In some cases, circuit 200 may be configured to facilitate non-contactmeasurement of Vth for memory cells 105-a. As explained in more detailbelow, the word line 110-a may be coupled with a ground reference, andthe bit line 115-a may be floating (e.g., not coupled with the groundreference or with any other voltage source). As also explained in moredetail below, the bit line 115-a may be scanned with an electron beamconfigured to set the bit line 115-a to a surface voltage, and Vth ofthe memory cell 105-a may be determined (e.g., evaluated or measured)based at least in part on whether the bit line 115-a becomes coupledwith the word line 110-a (and thus with the ground reference) whenscanned. Circuit 200 may be an example of an apparatus for measuring Vthfor a single memory cell 105 or may be replicated and included in anapparatus for measuring Vth for any number of memory cells 105, in someexamples.

FIG. 3 illustrates an example of an example I-V curve 300 for achalcogenide material that supports non-contact measurement of memorycell threshold voltage in accordance with various embodiments of thepresent disclosure. I-V curve 300 may in some cases represent an I-Vcurve for either a storage cell 205 or a selector device 210, such asthe storage cell 205-a and the selector device 210-a of circuit 200, oran I-V curve for an element within a single-element memory cell 105.

In I-V curve 300, solid curve 305 may illustrate the I-V characteristicsof a chalcogenide material in an amorphous state, and dashed curve 310may illustrate the I-V characteristics of the chalcogenide material in acrystalline state. The horizontal axis may correspond to the voltageacross the chalcogenide material, and the vertical axis may correspondto the current through the chalcogenide material.

Voltage 315 may correspond to Vth for the chalcogenide material. Asshown by solid curve 305, if the chalcogenide material is in theamorphous state, and the voltage across the chalcogenide materialincreases from zero to a value less than voltage 315, relatively littleincrease in current may occur. That is, when the chalcogenide materialis in the amorphous state, and the voltage across the chalcogenidematerial increases from zero to a value below voltage 315, thechalcogenide material may exhibit a relatively high resistance.

If the chalcogenide material is in the amorphous state, and the voltageacross the chalcogenide material increases from less than voltage 315 togreater than voltage 315, the current through the chalcogenide materialmay increase rapidly. As the current through the chalcogenide materialincreases, the voltage across the chalcogenide material may decreaseuntil the voltage reaches voltage 320. That is, the chalcogenidematerial may exhibit a negative resistance until the voltage reachesvoltage 320, which may be referred to as a snapback event, after whichthe chalcogenide material may again exhibit a positive resistance asindicated by the upper portion of solid curve 305, and the voltage mayrecover to voltage 315 and beyond.

In some cases, the chalcogenide material may be switched from theamorphous state to a crystalline state by setting the voltage across thechalcogenide material (and thus the current through the chalcogenidematerial) to a level within set region 325, which may increase thetemperate of the chalcogenide material beyond a crystallizationtemperature, for a temporal duration long enough for crystallization tooccur. If the chalcogenide material is in the crystalline state, asshown by dashed curve 310, the chalcogenide material may exhibit apositive ohmic (e.g., linear) resistance. The chalcogenide material maybe switched from the crystalline state to the amorphous state by settingthe voltage across the chalcogenide material (and thus the currentthrough the chalcogenide material) to a level within reset region 330,which may increase the temperate of the chalcogenide material beyond amelting temperature, and then removing the voltage/current sufficientlyabruptly (e.g., applying the voltage/current for only a relatively brieftemporal duration such that crystallization does not occur).

As shown by dashed curve 310, the positive resistance exhibited by thechalcogenide material in the crystalline state may be less than thepositive resistance exhibited by the chalcogenide material in theamorphous state below Vth. Thus, in some cases, a storage cell 205within a memory cell 105, such as the storage cell 205-a of memory cell105-a, may comprise a chalcogenide material, and the resistance of thestorage cell 205 (and thus the state of the memory cell) may be sensedby applying a voltage within read region 335 (e.g., a voltage belowVth). A resistance corresponding to one of the amorphous or crystallinestates may represent a logic “1” and a resistance corresponding to theother of the amorphous or crystalline states may represent a logic “0.”

As shown by solid curve 305, the positive resistance exhibited by thechalcogenide material in the amorphous state following the snapbackevent may be significantly (e.g., detectably) lower than the positiveresistance exhibited by the chalcogenide material prior to the snapbackevent. Thus, in some cases, a selector device 210 within a memory cell105, such as the selector device 210-a of memory cell 105-a, maycomprise a chalcogenide material that is formed or otherwise configuredin an amorphous state and maintained in the amorphous state. Thus, verylittle current may flow through the memory cell 105 when a voltageacross the memory cell 105 is below Vth, and significantly (e.g.,detectably) more current may flow through the memory cell 105 when avoltage across the memory cell 105 exceeds Vth.

Thus, as illustrated in the example I-V curve of FIG. 3, the resistanceof a material in an amorphous state (and thus of a memory cell 105 thatcomprises the material) may vary greatly depending on whether a voltageacross the material is greater than or less than Vth (e.g., greater thanor less than voltage 315). As explained in more detail below, a floatingbit line 115 coupled with a memory cell 105 may be scanned with anelectron beam so as to set the voltage across the memory cell to asurface voltage. Whether the surface voltage is greater than or lessthan Vth for the memory cell (e.g., greater than or less than voltage315) may be determined based on whether scanning the floating bit line115 causes current to flow through the memory cell 105 (e.g., puts thememory cell 105 into a relatively low-resistance state such as thatillustrated by the portion of solid curve 305 above voltage 315) or doesnot cause current to flow through the memory cell 105 (e.g., the memorycell 105 remains in a relatively high-resistance state such as thatillustrated by the portion of solid curve 305 below voltage 315). Insome cases, the bit line 115 may be scanned repeatedly at progressivelyhigher surface voltages until current is detected as flowing through thememory cell 105, with Vth determined as greater than the highest surfacevoltage that does not cause current to flow through the memory cell 105and less than the lowest surface voltage that does cause current to flowthrough the memory cell 105.

FIG. 4 illustrates an example of an apparatus 400 that supportsnon-contact measurement of memory cell threshold voltage in accordancewith various embodiments of the present disclosure. Apparatus 400includes a plurality of memory cells 105, a plurality of word lines 110,and a plurality of bit lines 115, which may be examples of memory cells105, word lines 110, and bit lines 115, respectively, as described withreference to FIGS. 1 and 2.

Each memory cell 105 may be coupled with one corresponding word line 110and one corresponding bit line 115. Thus, apparatus 400 may include onememory cell 105 for each unique word line 110/bit line 115 combination.In other examples, different configurations or combinations arecontemplated.

In some cases, a memory cell 105 may be disposed at a cross point of thecorresponding word line 110 and corresponding bit line 115. For example,the word lines 110 may be parallel to one another and oriented in afirst direction, and the bit lines 115 may be parallel to one anotherand oriented in a second direction (e.g., a second direction that isorthogonal to the first direction). In some cases, the word lines 110may be lower within the apparatus (e.g., at a lower level) than the bitlines 115, and memory cells 105 may be disposed between the level of theword lines 110 and the level of the bit lines 115.

In some cases, apparatus 400 may illustrate one deck of a device, andadditional decks may be disposed above apparatus 400 within the device.For example, as further illustrated in and discussed with reference toFIG. 5, bit lines 115 may function as bit lines for the memory cells 105illustrated in FIG. 4, but bit lines 115 may also function as word linesfor additional memory cells 105 included in the deck immediately aboveapparatus 400. In some cases, such a multi-deck device may be an exampleof a three-dimensional cross-point (3DXP) device.

As shown in FIG. 4, one word line 110-b may be coupled to a groundreference 405 and may thus be a grounded word line 110-b. For example,the ground reference 405 may comprise or be coupled with a substrate ofa wafer (e.g., a silicon wafer), which may also be referred to as a bulkof the wafer, that includes apparatus 400. The grounded word line 110-bmay be directly coupled with the substrate (e.g., hardwired to thesubstrate through a low-resistance connection), or the grounded wordline 110-b may be indirectly coupled with the substrate through a drivercircuit. In some cases, the driver circuit may have any number oftransistors, diodes, resistors or other electrical components configuredto allow current to flow in at least one direction between the groundedword line 110-b and the substrate.

In some cases, apparatus 400 may include other word lines 110 as shownin FIG. 4—that is, word lines 110 other than the grounded word line110-b—that are isolated from the ground reference 405. For example,apparatus 400 may include other word lines 110 that are floating (e.g.,not driven to a defined voltage). For example, an access line may befloating if it is not coupled with a corresponding driver circuit orotherwise coupled with any voltage source or voltage reference, such asthe ground reference 405.

The grounded word line 110-b may be coupled with one or more memorycells 105 (e.g., with shaded memory cells 105-b, 105-c, 105-d, 105-e inFIG. 4). A memory cell 105 coupled with the grounded word line 110-b mayalso be coupled with one corresponding bit line 115. For example, memorycell 105-b may be coupled with bit line 115-b, memory cell 105-c may becoupled with bit line 115-c, memory cell 105-d may be coupled with bitline 115-d, and memory cell 105-e may be coupled with bit line 115-e.

For each memory cell 105 coupled with the grounded word line 110-b, thecorresponding bit line 115 may be isolated from the ground reference405. For example, the corresponding bit line 115 may be floating. Thus,the corresponding bit line 115 may not be configured to be driven to adefined voltage by any circuitry within the apparatus 400 but mayinstead be configured to be set to a surface voltage by an electronbeam, in accordance with the techniques described herein.

Further, each memory cell 105 coupled with the grounded word line 110-bmay be configured to isolate the corresponding bit line 115 from theground reference 405 when the voltage differential between thecorresponding bit line 115 and the ground reference 405 is less than theVth of the memory cell 105, and to couple the corresponding bit line 115with the ground reference 405 (via grounded word line 110-b) when thevoltage differential between the corresponding bit line 115 and theground reference 405 is greater than the Vth of the memory cell 105.That is:

-   -   memory cell 105-b may be configured to isolate bit line 115-b        from the ground reference 405 when the voltage differential        between bit line 115-b and the ground reference 405 is less than        the Vth of memory cell 105-b, and to couple the bit line 115-b        with the ground reference 405 (via grounded word line 110-b)        when the voltage differential between bit line 115-b and the        ground reference 405 is greater than the Vth of memory cell        105-b;    -   memory cell 105-c may be configured to isolate bit line 115-c        from the ground reference 405 when the voltage differential        between bit line 115-c and the ground reference 405 is less than        the Vth of memory cell 105-c, and to couple the bit line 115-c        with the ground reference 405 (via grounded word line 110-b)        when the voltage differential between bit line 115-c and the        ground reference 405 is greater than the Vth of memory cell        105-c;    -   memory cell 105-d may be configured to isolate bit line 115-d        from the ground reference 405 when the voltage differential        between bit line 115-d and the ground reference 405 is less than        the Vth of memory cell 105-d, and to couple the bit line 115-d        with the ground reference 405 (via grounded word line 110-b)        when the voltage differential between bit line 115-d and the        ground reference 405 is greater than the Vth of memory cell        105-d; and    -   memory cell 105-e may be configured to isolate bit line 115-e        from the ground reference 405 when the voltage differential        between bit line 115-e and the ground reference 405 is less than        the Vth of memory cell 105-e, and to couple the bit line 115-e        with the ground reference 405 (via grounded word line 110-b)        when the voltage differential between bit line 115-e and the        ground reference 405 is greater than the Vth of memory cell        105-e.

It should be understood that apparatus 400 may include any number ofmemory cells 105 coupled with the grounded word line 110-b and anynumber of corresponding bit lines 115. It should also be understood thatany one of the word lines 110 may be coupled with the ground reference405, so long as any other word lines 110 within the apparatus 400 arefloating, and Vth for the memory cells 105 coupled with that one wordline 110 may thus be determined in accordance with the techniquesdescribed herein.

It should also be understood that physical arrangement of the wordlines, memory cells 105, and bit lines 115 in apparatus 400 is anillustrative example only, and that memory cells 105 and bit lines 115may be otherwise arranged in accordance with the techniques describedherein such that, for each memory cell 105 for which determination ofVth may be desired, a single current path from the ground reference 405to the corresponding bit line 115 exists and is through the memory cell105. For example, in some cases, word lines 110 other than the groundedword line 110-b may not be present.

In some cases, apparatus 400 may be included in (e.g., fabricated on) adie that includes other memory cells 105 in addition to those for whichdetermination of Vth is desired. For example, apparatus 400 mayrepresent a test structure within the die, and other memory cells 105may be included in the die that are not part of the test structure. Insome cases, a single wafer may include a plurality of memory tiles, andapparatus 400 may be included in one of the memory tiles while on ormore other memory tiles of the wafer include other devices or memorystructures.

In some cases, a default configuration for memory cells 105 within a diethat includes apparatus 400 may include coupling each memory cell 105with a corresponding word line 110 and a corresponding bit line 115, andcoupling each access line (e.g., word line 110 or bit line 115) with acorresponding driver circuit that may drive the access line to theground reference 405 or some other configurable voltage. Thus, in somecases, grounded word line 110-b may be coupled with a correspondingdriver circuit, and may be coupled with the ground reference 405 throughthe corresponding driver circuit. For example, the corresponding drivercircuit may be configured to allow current to flow between the groundreference 405 and the grounded word-line 110-b either bi-directionallyor unidirectionally (e.g., from the grounded word-line 110-b to theground reference 405). Configuring the corresponding driver circuit toallow current to flow between the ground reference 405 and the groundedword-line 110-b may comprising forming the corresponding driver circuitin such a configuration, so as to facilitate determination of Vth forone or more memory cells 105 during fabrication of a wafer.

In some cases, however, grounded word line 110-b may be coupled directlywith the ground reference 405. For example, grounded word line 110-b maybe “hardwired” to the ground reference 405 with conductive materials andthus with no intervening active (e.g., switching) circuitry that maydecouple the grounded word line 110-b and the ground reference 405 andno intervening resistive element (e.g., an element with a non-negligibleresistance). In some cases, for example, one or more interconnect layerswithin the die may be configured (e.g., modified from a defaultconfiguration) so as to couple the grounded word line 110-b directly(e.g., in hardwired fashion) to the die substrate.

In some cases, a floating access line within apparatus 400 (e.g., anybit line 115 and any word line 110 other than the grounded word line110-b within apparatus 400) may be isolated from the ground reference405 by configuring (e.g., modifying from a default configuration) one ormore interconnect layers within the die so as to include one or moregaps that isolate the floating access line from a corresponding drivercircuit. A die that includes apparatus 400 may include other accesslines (e.g., bit lines 115 or word lines 110 corresponding to memorycells 105 for which determination of Vth is not desired) that remaincoupled to corresponding driver circuits (e.g., via one or moreinterconnect layers). Such other bit lines 115 may be at a same level ofthe die as the bit lines 115 within apparatus 400, and such other wordlines 110 may be at a same level of the die as the word lines 110 withinapparatus 400.

FIG. 5 illustrates an example of an apparatus 500 that supportsnon-contact measurement of memory cell threshold voltage in accordancewith various embodiments of the present disclosure. Apparatus 500includes a plurality of memory cells 105, a plurality of word lines 110,and a plurality of bit lines 115, which may be examples of memory cells105, word lines 110, and bit lines 115, respectively, as described withreference to FIGS. 1, 2, and 4.

Apparatus 500 may include a first deck 505-a and a second deck 505-b.The first deck 505-a may include one word line 110-c coupled with aground reference 405-a, which may thus be referred to as a grounded wordline 110-c. The first deck 505-a may also include a memory cell 105-fthat is coupled with the grounded word line 110-c and with acorresponding bit line 115-f. As shown in FIG. 5, the first deck 505-amay also include other word lines 110—that is, word lines 110 other thanthe grounded word line 110-c—that are isolated from the ground reference405-a, and other memory cells 105—that is, memory cells 105 other thanmemory cell 105-f—that are coupled with a corresponding other word line110.

The second deck 505-b may be above the first deck 505-a include a secondplurality of memory cells 105 (e.g., shaded memory cells 105-g, 105-g,and 105-i) coupled with the bit line 115-f. The bit line 115-f may alsoserve as a word line for the second plurality of memory cells 105. Thesecond plurality of memory cells 105 may also each be coupled with asecond corresponding access line, such as a bit line 115-h. Both the bitline 115-f and the bit line 115-h may be isolated from the groundreference 405-a and floating.

The memory cell memory cell 105-f may be configured to isolate bit line115-f from the ground reference 405-a when the voltage differentialbetween bit line 115-f and the ground reference 405-a is less than theVth of memory cell 105-f, and to couple the bit line 115-f with theground reference 405-a (via grounded word line 110-b) when the voltagedifferential between bit line 115-f and the ground reference 405-a isgreater than the Vth of memory cell 105-f. Further, each memory cell 105coupled with bit line 115-h and bit line 115-f may be configured toisolate bit line 115-h from bit line 115-f when the voltage differentialbetween bit line 115-h and bit line 115-f is less than the Vth of thememory cell 105, and to couple bit line 115-h with bit line 115-f whenthe voltage differential between bit line 115-h and bit line 115-f isgreater than the Vth of the memory cell 105.

Hence, if bit line 115-h is set to a voltage (e.g., set to a surfacevoltage by an electron beam) sufficiently high so as to cause thevoltage differential between bit line 115-h and the ground reference toexceed the Vth of memory cell 105-f and the Vth of at least one of thesecond plurality of memory cells 105 (e.g., at least one of shadedmemory cells 105-g, 105-g, and 105-i), then memory cell 105-f and atleast one of the second plurality of memory cells 105 may couple bitline 115-h with the ground reference.

It should be understood that each deck 505 of apparatus 500 may includeany number of bit lines 115 and corresponding memory cells 105, and thatan apparatus in accordance with the structures and techniques describedherein may comprise any number of decks 505.

FIG. 6 illustrates a side view of an example process 600 that supportsnon-contact measurement of memory cell threshold voltage in accordancewith various embodiments of the present disclosure. Process 600 mayinclude scanning a wafer 605 (e.g., a silicon wafer)—which may includean apparatus such as apparatus 400, apparatus 500, or another apparatusin accordance with the teachings herein—with an electron beam 610.

The electron beam 610 may be generated by an EBI 615. The EBI 615 may insome cases be an Hermes Micro Vision EBI. The EBI 615 may include aWehnelt electrode 620 and a stage 625. The stage 625 may be coupled withor may otherwise serve as a ground reference 405-b. The Wehneltelectrode 620 may create a positive or negative voltage potentialrelative to the stage 625, and thus may either attract or repelscattered electrons 630 that may be extracted from the wafer 605. TheEBI 615 may have image analysis capabilities and may in some casessupport voltage contrasting techniques.

The wafer 605 may be configured such that one or more bit lines 115 maybe scanned by the electron beam 610 (e.g., may be exposed at the uppersurface of the wafer 605). The wafer 605 may also be configured so thata substrate of the wafer 605 is in contact with the stage 625 orotherwise coupled with the ground reference 405-b.

In some cases, process 600 may occur when the wafer 605 is at anintermediate stage of fabrication. For example, process 600 may occurduring a fabrication step at which one or more decks 505 of memory cells105 and bit lines 115 have been fabricated and after which one or moreadditional fabrication steps may occur (e.g., one or more additionaldecks 505 of memory cells 105 and bit lines 115 may be fabricated, orone or more other layers may be formed on the wafer 605).

In some cases, the difference in voltage potential between the electronsource within EBI 615 (the source of the electron beam 610) and thestage 625 may dictate the landing energy of electrons within theelectron beam 610 upon the surface of the wafer 605. The electron beam610 may generate a number scattered electrons 630 at a scanned location(e.g., localized spot) on the surface of the wafer 605, which mayinclude back scattered electrons and secondary electrons, based upon thelanding energy of electrons within the electron beam 610 (and thus uponthe difference in voltage potential between the electron source withinEBI 615 and the stage 625) and the characteristics of the scannedsurface material of the wafer 605. For example, difference surfacematerials may have different electron yield (σ) characteristics (e.g.,extracted electron count/incident electron count) at different levels oflanding energy (e.g., as measured in electronvolts (eV)) for theelectron beam 610.

If the Wehnelt electrode 620 is configured to have a positive voltagepotential relative to the stage 625 (and thus to the ground reference405-b), then the Wehnelt electrode 620 may attract the scatteredelectrons 630. Thus, if the landing energy of the electron beam 610 issufficient to have an electron yield greater than 1 (σ>1), and theWehnelt electrode 620 is configured to have a positive voltage, then theEBI 615 may act in an extraction mode, as more electrons (e.g.,scattered electrons 630) may be extracted from the wafer 605 than areinserted into the wafer 605 by the electron beam 610. This net loss ofelectrons at the scanned location of the surface of the wafer 605 mayresult in a positive voltage at the scanned location of the surface ofthe wafer 605 relative to the stage 625 and the ground reference.

Thus, in some cases, current may flow from a scanned location on thesurface of the wafer 605 to the ground reference 405-b so long as aconductive path exists between the scanned location on the surface ofthe wafer 605 and the ground reference 405-b. (e.g., between a bit line115 at the surface of the wafer 605 and the ground reference 405-b). Ifa conductive path does not exist between the scanned location on thesurface of the wafer 605 and the ground reference 405-b, then and thescanned location on the surface of the wafer 605 may not emit scatteredelectrons 630

Conversely, if the Wehnelt electrode 620 is configured to have anegative voltage potential relative to the stage 625 (and thus to theground reference 405-b), then the Wehnelt electrode 620 may repel thescattered electrons 630 back to the wafer 605. Thus, the electronsinserted into the wafer 605 by the electron beam 610 may cause a netgain of electrons at the scanned location of the surface of the wafer605, resulting in a negative voltage at the scanned location of thesurface of the wafer 605 relative to the stage 625 and the groundreference. Thus, in some cases, current may flow from the groundreference 405-b to the scanned location on the surface of the wafer 605so long as a conductive path exists between the scanned location on thesurface of the wafer 605 and the ground reference 405-b. (e.g., betweena bit line 115 at the surface of the wafer 605 and the ground reference405-b).

In some cases, EBI 615 may include a beam deflector, and the beamdeflector may be configured to direct the electron beam 610 to beincident upon a particular location on the surface of the wafer 605. Insome cases, the beam deflector may be configured to direct the electronbeam 610 to be incident upon a particular location on the surface of thewafer 605 for a particular amount of time, which may be referred to as adwelling time.

As explained in more detail with reference to FIG. 7, wafer 605 mayinclude apparatus 400, apparatus 500, or another structure in accordancewith the teachings herein. The electron beam 610 may be targeted tospecific locations on the top surface of the wafer 605 (either bydirecting the electron beam 610 or by positioning (e.g., moving) thewafer 605) corresponding to exposed floating bit lines 115. The surfacevoltage at a scanned location on the surface of the wafer 605 may beconfigured by configuring the landing energy of the electron beam 610(that is, by configuring EBI 615 to generate the electron beam 610 so asto have a desired landing energy) or, alternatively or additionally, byconfiguring the voltage of the Wehnelt electrode 620 relative to thestage 625. Voltage contrasting or other techniques, such as other imageanalysis techniques, may be used to determine whether scanning afloating bit line 115 causes current to flow between the scanned bitline 115 and the ground reference 405-b, with current flowing betweenthe scanned bit line 115 and the ground reference 405-b indicative thatthe surface voltage created by the electron beam exceeds Vth for thememory cell 105 corresponding to the scanned bit line 115.

FIG. 7 illustrates a top view of an example process 700 that supportsnon-contact measurement of memory cell threshold voltage in accordancewith various embodiments of the present disclosure. Process 700 mayinclude scanning a wafer 605-a (e.g., a silicon wafer)—which may includean apparatus such as apparatus 400, apparatus 500, or another apparatusin accordance with the teachings herein—with an electron beam 610-a. Insome cases, the wafer 605-a illustrated in FIG. 7 may be a wafer portionand may be part of a larger wafer that includes other structures.

The wafer 605-a may include a number of exposed (e.g., exposed to thetop surface of the wafer 605-a) bit lines 115. The bit lines 115 may beincluded in an apparatus such as apparatus 400, apparatus 500, oranother apparatus in accordance with the teachings herein. In somecases, the bit lines 115 may comprise tungsten, and just the exposedsurface material for bit lines 115 may be a tungsten material. From atop view, the surface of the wafer 605-a may alternate between bit lines115 and other material 705. The other material may comprise one or moredielectric, insulating, or other materials.

The electron beam 610-a may have an associated width or diameter (e.g.,5 nanometers), and each bit line 115 may have an associated width (e.g.,20 nanometers). Each bit line 115 may or may not have the same width.

As indicated by FIG. 7, process 700 may include scanning the bit lines115 in a particular direction and/or for a particular duration with theelectron beam 610-a. The electron beam 610-a may be configured to scaneach bit line 115 for a particular dwelling time, with a particularlanding energy, and with a particular Wehnelt electrode 620 voltage.Thus, the surface voltage of a bit line 115, when scanned, may bedetermined by a configuration of an EBI 615 that generates the electronbeam 610-a and/or the configuration of a Wehnelt electrode 620, asdescribed in reference to FIG. 6.

The EBI 615 that generates the electron beam 610-a may include one ormore voltage imaging contrasting and related capabilities. Thus, imageanalysis may be used to determine whether a voltage difference between asurface voltage of a scanned bit line 115, as set by scanning the bitline 115 with the electron beam 610-a, and a ground reference 405 issufficient to cause current to flow between the scanned bit line 115 andthe ground reference 405. For example, the EBI 615 may produce an imagein which a bit line 115 that is coupled with the ground reference 405appears as having a first brightness (e.g., as a relatively bright linein an EBI image), and a bit line 115 that is not coupled with the groundreference 405 appears as having a second brightness lower than the firstbrightness (e.g., as a relatively dark line in an EBI image). Forexample, a bit line 115 that is coupled with the ground reference 405may appear as a relatively bright line because a current path existsbetween the ground reference 405 and the bit line 115 such that the bitline 115 may emit scattered electrons 630. Conversely, for example, abit line 115 that is not coupled with the ground reference 405 mayappear as a relatively dark line because no current path exists betweenthe ground reference 405 and the bit line 115 such that the bit line 115may not emit scattered electrons 630.

Thus, the EBI 615 may produce an image in which, if the surface voltageof the scanned bit line 115 exceeds Vth for a corresponding memory cell105 (relative to the ground reference 405), the bit line may appear ashaving a first brightness (e.g., as a relatively bright line).Similarly, if the surface voltage of the scanned bit line 115 is belowVth for the corresponding memory cell 105 (relative to the groundreference 405), the bit line may appear as having a second brightnesslower than the first brightness (e.g., as a relatively dark line). Thus,based at least in part on scanning a bit line 115 with the electron beam610-a and thereby setting the bit line 115 to a surface voltage, Vth fora memory cell 105 corresponding to (e.g., coupled with) the bit line 115may be determined.

By repeatedly scanning a bit line 115 of the wafer 605-a with theelectron beam 610-a with progressively increasing surface voltages, Vthfor a corresponding memory cell 105 may be determined. For example, Vthfor the corresponding memory cell 105 may be determined as greater thana highest surface voltage that does not result in a line having a firstbrightness (e.g., a relatively bright line) and less than or equal to alowest surface voltage that does result in a line having the firstbrightness. The accuracy of such Vth determinations may improvecommensurate with granularity of control for EBIs and/or Wehneltelectrodes and related image analysis capabilities.

Further, multiple bit lines 115 of the wafer 605-a may be scanned withthe electron beam 610-a, possibly repeatedly with progressivelyincreasing surface voltages, to get a distribution of Vth values fordifferent memory cells 105 corresponding to the different bit lines 115.Thus, information about process variation may be obtained based at leastin part on scanning the bit lines 115 with the electron beam 610-a aswell as information about absolute Vth values. For example, withsuccessive scans by the electron beam 610-a with different surfacevoltage configurations, a density of conductive memory cells 105 versusnonconductive memory cells 105 may be quantified for each surfacevoltage configuration.

For example, wafer 605 may include apparatus 400, apparatus 500, oranother structure in accordance with the teachings herein. Consideringthe example of apparatus 400, the electron beam 610-a and/or the Wehneltelectrode 620 may be configured to generate a first surface voltage, andthe electron beam 610-a may be directed so as to be incident uponfloating bit line 115-b (either by directing the electron beam 610-a orby positioning (e.g., moving) the wafer 605), and voltage contrastingmay be used to determine whether floating bit line 115-b becomes coupledwith the ground reference 405 and thus whether the first surface voltageexceeds Vth for memory cell 105-b. The electron beam 610-a maysubsequently be directed so as to successively be incident upon floatingbit line 115-c, floating bit line 115-d, and floating bit line 115-e,and voltage contrasting may similarly be used to determine whether thefirst surface voltage exceeds Vth for memory cell 105-c, memory cell105-d, and memory cell 105-e respectively.

Subsequently, the electron beam 610-a and/or the Wehnelt electrode 620may be configured to generate a second, higher surface voltage, and theelectron beam 610-a may be directed so as to successively be incidentupon floating bit line 115-b, floating bit line 115-c, floating bit line115-d, and floating bit line 115-e, and voltage contrasting maysimilarly be used to determine whether the second surface voltageexceeds Vth for memory cell 105-b, memory cell 105-c, memory cell 105-d,and memory cell 105-e respectively. It is so be understood that anynumber of different surface voltages may be utilized, that differentsurface voltages may be utilized in any order (e.g., either increasing,decreasing, or neither increasing no decreasing order), that any numberof floating bit lines 115 may be scanned, and that floating bit lines115 may be scanned in any temporal order.

Thus, the structures and techniques described herein may allow Vth forone or more memory cells to be measured without contacting the memorycells or corresponding access lines (e.g., physically contacting thememory cells or corresponding access lines with a physical probe).Accordingly, the structures and techniques described herein may beutilized without forming or using specialized contact structures forphysical probes, such as bond pads. The structures and techniquesdescribed herein may also, for example, allow Vth for one or more memorycells to be measured at an intermediate fabrication step for a wafer(e.g., a fabrication step at which the one or more corresponding bitlines are exposed at an upper surface of a wafer or die), therebyproviding information for engineers and other personnel with reducedlatency.

Further, by facilitating Vth measurement at an intermediate fabricationstep, the structures and techniques described herein may facilitate Vthmeasurement at multiple steps within a fabrication process (e.g., at afirst step when bit lines 115 for a first deck 505 are exposed at thetop surface of a wafer 605, at a second step when bit lines 115 for asecond deck 505 are exposed at the tope surface of the wafer 605, and soon). The structures and techniques described herein may also be suitablefor device structures that are problematic (e.g., structures that aretoo small, too rough, have too many layers, or have layers withinterfering characteristics) for one or more other Vth measurementtechniques, such as contact-based Vth measurement techniques utilizingphysical probes. Thus, the structures and techniques described hereinmay have benefits such as increasing reliability of memory structures,detecting excursions from multiple processing steps, reducing design ormanufacturing costs of memory structures, or reducing design ormanufacturing time of memory structures (e.g., expediting learningcycles), along with other benefits that may be appreciated by one ofordinary skill.

FIG. 8 shows a block diagram 800 of a testing manager 815 that supportsnon-contact measurement of memory cell threshold voltage in accordancewith embodiments of the present disclosure. The testing manager 815 maybe an example of aspects of a testing manager 915 described withreference to FIG. 9. The testing manager 815 may include structureidentification component 820, electron beam component 825, and analysiscomponent 830. Each of these modules may communicate, directly orindirectly, with one another (e.g., via one or more buses).

Structure identification component 820 may identify a first access linethat is coupled with a ground reference and identify a set of memorycells each coupled with the first access line and with a correspondingsecond access line of a set of second access lines.

Electron beam component 825 may set at least one second access line ofthe set of second access lines to a surface voltage by scanning the atleast one second access line with an electron beam and set the at leastone second access line of the set of second access lines to a secondsurface voltage by scanning the at least one second access line with asecond electron beam.

Analysis component 830 may determine a threshold voltage of acorresponding memory cell of the set of memory cells based on settingthe at least one second access line of the set of second access lines tothe surface voltage. In some cases, analysis component 830 may alsodetermine, based on scanning the at least one second access line withthe electron beam, that the at least one second access line is coupledwith the first access line, where determining the threshold voltage ofthe corresponding memory cell is based on determining that the at leastone second access line is coupled with the first access line. Analysiscomponent 830 may also determine the threshold voltage of thecorresponding memory cell of the set of memory cells based on settingthe at least one second access line of the set of second access lines tothe second surface voltage.

FIG. 9 shows a diagram of a system 900 including a device 905 thatsupports non-contact measurement of memory cell threshold voltage inaccordance with embodiments of the present disclosure. Device 905 may bean example of or include the components of testing manager 815 asdescribed above, e.g., with reference to FIG. 8. Device 905 may includecomponents for bi-directional voice and data communications includingcomponents for transmitting and receiving communications, includingtesting manager 915, memory cells 920, basic input/output system (BIOS)component 925, processor 930, I/O controller 935, and peripheralcomponents 940. These components may be in electronic communication viaone or more buses (e.g., bus 910).

Memory cells 920 may store information (i.e., in the form of a logicalstate) as described herein.

BIOS component 925 be a software component that includes BIOS operatedas firmware, which may initialize and run various hardware components.BIOS component 925 may also manage data flow between a processor andvarious other components, e.g., peripheral components, input/outputcontrol component, etc. BIOS component 925 may include a program orsoftware stored in read only memory (ROM), flash memory, or any othernon-volatile memory.

Processor 930 may include an intelligent hardware device, (e.g., ageneral-purpose processor, a DSP, a central processing unit (CPU), amicrocontroller, an ASIC, an FPGA, a programmable logic device, adiscrete gate or transistor logic component, a discrete hardwarecomponent, or any combination thereof). In some cases, processor 930 maybe configured to operate a memory array using a memory controller. Inother cases, a memory controller may be integrated into processor 930.Processor 930 may be configured to execute computer-readableinstructions stored in a memory to perform various functions (e.g.,functions or tasks supporting non-contact measurement of memory cellthreshold voltage).

I/O controller 935 may manage input and output signals for device 905.I/O controller 935 may also manage peripherals not integrated intodevice 905. In some cases, I/O controller 935 may represent a physicalconnection or port to an external peripheral. In some cases, I/Ocontroller 935 may utilize an operating system such as iOS®, ANDROID®,MS-DOS®, MS-WINDOWS®, OS/2®, UNIX®, LINUX®, or another known operatingsystem. In other cases, I/O controller 935 may represent or interactwith a modem, a keyboard, a mouse, a touchscreen, or a similar device.In some cases, I/O controller 935 may be implemented as part of aprocessor. In some cases, a user may interact with device 905 via I/Ocontroller 935 or via hardware components controlled by I/O controller935.

Peripheral components 940 may include any input or output device, or aninterface for such devices. Examples may include disk controllers, soundcontroller, graphics controller, Ethernet controller, modem, universalserial bus (USB) controller, a serial or parallel port, or peripheralcard slots, such as peripheral component interconnect (PCI) oraccelerated graphics port (AGP) slots.

Input 945 may represent a device or signal external to device 905 thatprovides input to device 905 or its components. This may include a userinterface or an interface with or between other devices. In some cases,input 945 may be managed by I/O controller 935, and may interact withdevice 905 via a peripheral component 940.

Output 950 may also represent a device or signal external to device 905configured to receive output from device 905 or any of its components.Examples of output 950 may include a display, audio speakers, a printingdevice, another processor or printed circuit board, etc. In some cases,output 950 may be a peripheral element that interfaces with device 905via peripheral component(s) 940. In some cases, output 950 may bemanaged by I/O controller 935

The components of device 905 may include circuitry designed to carry outtheir functions. This may include various circuit elements, for example,conductive lines, transistors, capacitors, inductors, resistors,amplifiers, or other active or inactive elements, configured to carryout the functions described herein. Device 905 may be a computer, aserver, a laptop computer, a notebook computer, a tablet computer, amobile phone, a wearable electronic device, a personal electronicdevice, or the like. Or device 905 may be a portion or aspect of such adevice.

FIG. 10 shows a flowchart illustrating a method 1000 for non-contactmeasurement of memory cell threshold voltage in accordance withembodiments of the present disclosure. The operations of method 1000 maybe implemented by a testing manager 815 or its components as describedherein. For example, the operations of method 1000 may be performed by atesting manager as described with reference to FIGS. 8 and 9. In someexamples, a testing manager 815 may execute a set of codes to controlthe functional elements of one or more devices to perform the functionsdescribed below. Additionally or alternatively, the testing manager 815may perform aspects of the functions described below usingspecial-purpose hardware.

At 1005 the testing manager 815 may identify a first access line that iscoupled with a ground reference. The first access line may be includedin an apparatus that supports non-contact measurement of memory cellthreshold voltage in accordance with embodiments of the presentdisclosure, such as the example of apparatus 400 or the example ofapparatus 500. The operations of 1005 may be performed according to themethods described herein. In certain examples, aspects of the operationsof 1005 may be performed by a structure identification component asdescribed with reference to FIGS. 8 and 9.

At 1010 the testing manager 815 may identify a plurality of memory cellseach coupled with the first access line and with a corresponding secondaccess line of a plurality of second access lines. The operations of1010 may be performed according to the methods described herein. Incertain examples, aspects of the operations of 1010 may be performed bya structure identification component as described with reference toFIGS. 8 and 9.

At 1015 the testing manager 815 may set at least one second access lineof the plurality of second access lines to a surface voltage by scanningthe at least one second access line with an electron beam. Theoperations of 1015 may be performed according to the methods describedherein. In certain examples, aspects of the operations of 1015 may beperformed by an electron beam component as described with reference toFIGS. 8 and 9.

At 1020 the testing manager 815 may determine a threshold voltage of acorresponding memory cell of the plurality of memory cells based atleast in part on setting the at least one second access line of theplurality of second access lines to the surface voltage. The operationsof 1020 may be performed according to the methods described herein. Incertain examples, aspects of the operations of 1020 may be performed byan analysis component as described with reference to FIGS. 8 and 9.

FIG. 11 shows a flowchart illustrating a method 1100 for non-contactmeasurement of memory cell threshold voltage in accordance withembodiments of the present disclosure. The operations of method 1100 maybe implemented by a testing manager 815 or its components as describedherein. For example, the operations of method 1100 may be performed by atesting manager as described with reference to FIGS. 8 and 9. In someexamples, a testing manager 815 may execute a set of codes to controlthe functional elements of one or more devices to perform the functionsdescribed below. Additionally or alternatively, the testing manager 815may perform aspects of the functions described below usingspecial-purpose hardware.

At 1105 the testing manager 815 may identify a first access line that iscoupled with a ground reference. The first access line may be includedin an apparatus that supports non-contact measurement of memory cellthreshold voltage in accordance with embodiments of the presentdisclosure, such as the example of apparatus 400 or the example ofapparatus 500. The operations of 1105 may be performed according to themethods described herein. In certain examples, aspects of the operationsof 1105 may be performed by a structure identification component asdescribed with reference to FIGS. 8 and 9.

At 1110 the testing manager 815 may identify a plurality of memory cellseach coupled with the first access line and with a corresponding secondaccess line of a plurality of second access lines. The operations of1110 may be performed according to the methods described herein. Incertain examples, aspects of the operations of 1110 may be performed bya structure identification component as described with reference toFIGS. 8 and 9.

At 1115 the testing manager 815 may set at least one second access lineof the plurality of second access lines to a surface voltage by scanningthe at least one second access line with an electron beam. Theoperations of 1115 may be performed according to the methods describedherein. In certain examples, aspects of the operations of 1115 may beperformed by an electron beam component as described with reference toFIGS. 8 and 9.

At 1120 the testing manager 815 may determine a threshold voltage of acorresponding memory cell of the plurality of memory cells based atleast in part on setting the at least one second access line of theplurality of second access lines to the surface voltage. The operationsof 1120 may be performed according to the methods described herein. Incertain examples, aspects of the operations of 1120 may be performed byan analysis component as described with reference to FIGS. 8 and 9.

At 1125 the testing manager 815 may set the at least one second accessline of the plurality of second access lines to a second surface voltageby scanning the at least one second access line with a second electronbeam. The operations of 1125 may be performed according to the methodsdescribed herein. In certain examples, aspects of the operations of 1125may be performed by an electron beam component as described withreference to FIGS. 8 and 9.

At 1130 the testing manager 815 may determine the threshold voltage ofthe corresponding memory cell of the plurality of memory cells based atleast in part on setting the at least one second access line of theplurality of second access lines to the second surface voltage. Theoperations of 1130 may be performed according to the methods describedherein. In certain examples, aspects of the operations of 1130 may beperformed by an analysis component as described with reference to FIGS.8 and 9.

FIG. 12 shows a flowchart illustrating a method 1200 for non-contactmeasurement of memory cell threshold voltage in accordance withembodiments of the present disclosure. The operations of method 1200 maybe implemented by a testing manager 815 or its components as describedherein, among other examples. For example, the operations of method 1200may be performed by a testing manager as described with reference toFIGS. 8 and 9. In some examples, a testing manager 815 may execute a setof codes to control the functional elements of one or more devices toperform the functions described below. Additionally or alternatively,the testing manager 815 may perform aspects of the functions describedbelow using special-purpose hardware.

At 1205 the testing manager 815 may identify a first access line withina wafer that is coupled with a ground reference. The first access linemay be included in an apparatus that supports non-contact measurement ofmemory cell threshold voltage in accordance with embodiments of thepresent disclosure, such as the example of apparatus 400 or the exampleof apparatus 500. The operations of 1205 may be performed according tothe methods described herein. In certain examples, aspects of theoperations of 1205 may be performed by a structure identificationcomponent as described with reference to FIGS. 8 and 9.

At 1210 the testing manager 815 may identify a plurality of memory cellseach coupled with the first access line and with a corresponding secondaccess line of a plurality of second access lines. The operations of1210 may be performed according to the methods described herein. Incertain examples, aspects of the operations of 1210 may be performed bya structure identification component as described with reference toFIGS. 8 and 9.

At 1215 the testing manager 815 may configure an electron beam accordingto a lowest expected Vth of the memory cells included in the pluralityof memory cells identified at 1210. The testing manager 815 mayconfigure the electron beam at 1215 by configuring the landing energy ofthe electron beam and/or the voltage of a Wehnelt electrode such thatscanning a location on the surface of the wafer with the electron beamwill generate a first desired surface voltage at the scanned location ofthe wafer. In certain examples, aspects of the operations of 1215 may beperformed by an electron beam component as described with reference toFIGS. 8 and 9.

At 1220 the testing manager 815 may scan the plurality of second accesslines corresponding to the plurality of memory cells identified at 1210with the electron beam. In certain examples, aspects of the operationsof 1220 may be performed by an electron beam component as described withreference to FIGS. 8 and 9.

At 1225 the testing manager 815 may identify a number of scanned secondaccess lines that appear as having a first brightness (e.g., asrelatively bright) when scanned (e.g., scanned at 1220). For example,the testing manager may configure an image analysis tool, such as animage analysis tool included in an EBI, to identify a number of thesecond access lines scanned at 1220 that appear as having at least thefirst brightness when scanned, and to also identify a number of thesecond access lines scanned at 1220 that appear as having a secondbrightness lower than the first brightness (e.g., as relatively dark)when scanned.

In some cases, the image analysis tool may identify as having the firstbrightness any second access line scanned at 1220 that appears with abrightness level at or above a brightness threshold level, and the imageanalysis tool may identify as having the second brightness any secondaccess line scanned at 1220 that appears with a brightness level belowthe brightness threshold level. In accordance with the techniquesdescribed herein, a second access line may appear as having the firstbrightness when scanned at 1220 if a conductive path exists from thesecond access line to the ground reference, and thus a second accessline may appear as having the first brightness when scanned at 1220 ifthe surface voltage created by the electron beam at 1220 meets orexceeds Vth for a memory cell coupled with the second access line.

Conversely, in accordance with the techniques described herein, a secondaccess line may appear as having the second brightness (e.g., as dark,or not bright) when scanned at 1220 if a conductive path does not existfrom the second access line to the ground reference, and thus a secondaccess line may appear as having the second brightness when scanned at1220 if the surface voltage created by the electron beam at 1220 isbelow Vth for a memory cell coupled with the second access line.

Thus, the number of second access lines scanned at 1220 that areidentified as having the first brightness at 1225 may correspond to anumber of memory cells for which the surface voltage created by theelectron beam at 1220 exceeds Vth, and the number of second access linesscanned at 1220 that that are not identified as having the firstbrightness at 1225 may correspond to a number of memory cells for whichthe surface voltage created by the electron beam at 1220 does not exceedVth. In certain examples, aspects of the operations of 1225 may beperformed by an analysis component as described with reference to FIGS.8 and 9.

At 1230 the testing manager 815 may determine whether the configurationof the electron beam (e.g., the configured landing energy of theelectron beam and/or the configured voltage of the Wehnelt electrode)utilized at 1220 corresponds to a surface voltage less than a maximumexpected Vth for the set of memory cells identified at 1210. In certainexamples, aspects of the operations of 1230 may be performed by anelectron beam component as described with reference to FIGS. 8 and 9.

If at 1230 the testing manager 815 determines that the configuration ofthe electron beam utilized at 1220 is for a surface voltage that is lessthan the maximum expected Vth for the set of memory cells identified at1210, the testing manager 815 may proceed to 1235. At 1235 the testingmanager 815 may configure the electron beam according to a nextconfiguration. For example, the testing manager 815 may configure theelectron beam at 1235 by configuring the landing energy of the electronbeam and/or the voltage of a Wehnelt electrode such that scanning alocation on the surface of the wafer with the electron beam willgenerate a next surface voltage at the scanned location of the wafer.The next surface voltage may in some cases be higher than the surfacevoltage created by the electron beam at 1220 by a fixed incrementalamount. In certain examples, aspects of the operations of 1230 may beperformed by an electron beam component as described with reference toFIGS. 8 and 9.

If at 1230 the testing manager 815 determines that the configuration ofthe electron beam utilized at 1220 is for a surface voltage that isgreater than or equal to the maximum expected Vth for the set of memorycells identified at 1210, the testing manager 815 may proceed to 1240.At 1240 the testing manager 815 may determine characteristics of thememory cells identified at 1210. For example, the testing manager may at1240 determine a value of Vth for one or more of the memory cellsidentified at 1210. For example, the testing manager may determine thatVth of a memory cell is less than or equal to the lowest correspondingsurface voltage which the testing manager identified the correspondingsecond access line as having the first brightness at 1225. Further, thetesting manager 815 may determine that any second access line that wasnot identified as having the first brightness at any instance of 1225 iseither defective (e.g., not properly configured) or coupled with amemory cell having an undesirably high Vth. The testing manager 815 mayalso determine population characteristics (e.g., a distributions of Vthvalues and related statistical measures, such as average Vth value,median Vth value, minimum Vth value, maximum Vth values, etc.) for thememory cells identified at 1210. In certain examples, aspects of theoperations of 1230 may be performed by an analysis component asdescribed with reference to FIGS. 8 and 9. It should be noted that themethods described above describe possible implementations, and that theoperations and the steps may be rearranged or otherwise modified andthat other implementations are possible. Furthermore, embodiments fromtwo or more of the methods may be combined.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the above description may berepresented by voltages, currents, electromagnetic waves, magneticfields or particles, optical fields or particles, or any combinationthereof. Some drawings may illustrate signals as a single signal;however, it will be understood by a person of ordinary skill in the artthat the signal may represent a bus of signals, where the bus may have avariety of bit widths.

The term “electronic communication” and “coupled” refer to arelationship between components that support electron flow between thecomponents. This may include a direct connection between components ormay include intermediate components. Components in electroniccommunication or coupled to one another may be actively exchangingelectrons or signals (e.g., in an energized circuit) or may not beactively exchanging electrons or signals (e.g., in a de-energizedcircuit) but may be configured and operable to exchange electrons orsignals upon a circuit being energized. By way of example, twocomponents physically connected via a switch (e.g., a transistor) are inelectronic communication or may be coupled regardless of the state ofthe switch (i.e., open or closed).

The term “layer” used herein refers to a stratum or sheet of ageometrical structure. each layer may have three dimensions (e.g.,height, width, and depth) and may cover some or all of a surface. Forexample, a layer may be a three-dimensional structure where twodimensions are greater than a third, e.g., a thin-film. Layers mayinclude different elements, components, and/or materials. In some cases,one layer may be composed of two or more sublayers. In some of theappended figures, two dimensions of a three-dimensional layer aredepicted for purposes of illustration. Those skilled in the art will,however, recognize that the layers are three-dimensional in nature

As used herein, the term “substantially” means that the modifiedcharacteristic (e.g., a verb or adjective modified by the termsubstantially) need not be absolute but is close enough so as to achievethe advantages of the characteristic.

As used herein, the term “electrode” may refer to an electricalconductor, and in some cases, may be employed as an electrical contactto a memory cell or other component of a memory array. An electrode mayinclude a trace, wire, conductive line, conductive layer, or the likethat provides a conductive path between elements or components of memoryarray 100.

The term “photolithography,” as used herein, may refer to the process ofpatterning using photoresist materials and exposing such materials usingelectromagnetic radiation. For example, a photoresist material may beformed on a base material by, for example, spin-coating the photoresiston the base material. A pattern may be created in the photoresist byexposing the photoresist to radiation. The pattern may be defined by,for example, a photo mask that spatially delineates where the radiationexposes the photoresist. Exposed photoresist areas may then be removed,for example, by chemical treatment, leaving behind the desired pattern.In some cases, the exposed regions may remain and the unexposed regionsmay be removed.

Chalcogenide materials may be materials or alloys that include at leastone of the elements S, Se, and Te. Phase change materials discussedherein may be chalcogenide materials. Chalcogenide materials may includealloys of S, Se, Te, Ge, As, Al, Sb, Au, indium (In), gallium (Ga), tin(Sn), bismuth (Bi), palladium (Pd), cobalt (Co), oxygen (O), silver(Ag), nickel (Ni), platinum (Pt). Example chalcogenide materials andalloys may include, but are not limited to, Ge—Te, In—Se, Sb—Te, Ga—Sb,In—Sb, As—Te, Al—Te, Ge—Sb—Te, Te—Ge—As, In—Sb—Te, Te—Sn—Se, Ge—Se—Ga,Bi—Se—Sb, Ga—Se—Te, Sn—Sb—Te, In—Sb—Ge, Te—Ge—Sb—S, Te—Ge—Sn—O,Te—Ge—Sn—Au, Pd—Te—Ge—Sn, In—Se—Ti—Co, Ge—Sb—Te—Pd, Ge—Sb—Te—Co,Sb—Te—Bi—Se, Ag—In—Sb—Te, Ge—Sb—Se—Te, Ge—Sn—Sb—Te, Ge—Te—Sn—Ni,Ge—Te—Sn—Pd, or Ge—Te—Sn—Pt. The hyphenated chemical compositionnotation, as used herein, indicates the elements included in aparticular compound or alloy and is intended to represent allstoichiometries involving the indicated elements. For example, Ge—Te mayinclude Ge_(x)Te_(y), where x and y may be any positive integer. Otherexamples of variable resistance materials may include binary metal oxidematerials or mixed valence oxide including two or more metals, e.g.,transition metals, alkaline earth metals, and/or rare earth metals.Embodiments are not limited to a particular variable resistance materialor materials associated with the memory elements of the memory cells.For example, other examples of variable resistance materials can be usedto form memory elements and may include chalcogenide materials, colossalmagnetoresistive materials, or polymer-based materials, among others.

The term “isolated” refers to a relationship between components in whichelectrons are not presently capable of flowing between them; componentsare isolated from each other if there is an open circuit between them.For example, two components physically connected by a switch may beisolated from each other when the switch is open.

As used herein, the term “shorting” refers to a relationship betweencomponents in which a conductive path is established between thecomponents via the activation of a single intermediary component betweenthe two components in question. For example, a first component shortedto a second component may exchange electrons with the second componentwhen a switch between the two components is closed. Thus, shorting maybe a dynamic operation that enables the flow of charge betweencomponents (or lines) that are in electronic communication.

The devices discussed herein may be formed on a semiconductor substrate,such as silicon, germanium, silicon-germanium alloy, gallium arsenide,gallium nitride, etc. In some cases, the substrate is a semiconductorwafer. In other cases, the substrate may be a silicon-on-insulator (SOI)substrate, such as silicon-on-glass (SOG) or silicon-on-sapphire (SOP),or epitaxial layers of semiconductor materials on another substrate. Theconductivity of the substrate, or sub-regions of the substrate, may becontrolled through doping using various chemical species including, butnot limited to, phosphorous, boron, or arsenic. Doping may be performedduring the initial formation or growth of the substrate, byion-implantation, or by any other doping means.

A transistor or transistors discussed herein may represent afield-effect transistor (FET) and comprise a three terminal deviceincluding a source, drain, and gate. The terminals may be connected toother electronic elements through conductive materials, e.g., metals.The source and drain may be conductive and may comprise a heavily-doped,e.g., degenerate, semiconductor region. The source and drain may beseparated by a lightly-doped semiconductor region or channel. If thechannel is n-type (i.e., majority carriers are electrons), then the FETmay be referred to as a n-type FET. If the channel is p-type (i.e.,majority carriers are holes), then the FET may be referred to as ap-type FET. The channel may be capped by an insulating gate oxide. Thechannel conductivity may be controlled by applying a voltage to thegate. For example, applying a positive voltage or negative voltage to ann-type FET or a p-type FET, respectively, may result in the channelbecoming conductive. A transistor may be “on” or “activated” when avoltage greater than or equal to the transistor's threshold voltage isapplied to the transistor gate. The transistor may be “off” or“deactivated” when a voltage less than the transistor's thresholdvoltage is applied to the transistor gate.

The description set forth herein, in connection with the appendeddrawings, describes example configurations and does not represent allthe examples that may be implemented or that are within the scope of theclaims. The term “exemplary” used herein means “serving as an example,instance, or illustration,” and not “preferred” or “advantageous overother examples.” The detailed description includes specific details forthe purpose of providing an understanding of the described techniques.These techniques, however, may be practiced without these specificdetails. In some instances, well-known structures and devices are shownin block diagram form in order to avoid obscuring the concepts of thedescribed examples.

In the appended figures, similar components or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a dash and a secondlabel that distinguishes among the similar components. If just the firstreference label is used in the specification, the description isapplicable to any one of the similar components having the same firstreference label irrespective of the second reference label.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the above description may berepresented by voltages, currents, electromagnetic waves, magneticfields or particles, optical fields or particles, or any combinationthereof.

The various illustrative blocks and modules described in connection withthe disclosure herein may be implemented or performed with ageneral-purpose processor, a DSP, an ASIC, an FPGA or other programmablelogic device, discrete gate or transistor logic, discrete hardwarecomponents, or any combination thereof designed to perform the functionsdescribed herein. A general-purpose processor may be a microprocessor,but in the alternative, the processor may be any conventional processor,controller, microcontroller, or state machine. A processor may also beimplemented as a combination of computing devices (e.g., a combinationof a digital signal processor (DSP) and a microprocessor, multiplemicroprocessors, one or more microprocessors in conjunction with a DSPcore, or any other such configuration).

The functions described herein may be implemented in hardware, softwareexecuted by a processor, firmware, or any combination thereof. Ifimplemented in software executed by a processor, the functions may bestored on or transmitted over as one or more instructions or code on acomputer-readable medium. Other examples and implementations are withinthe scope of the disclosure and appended claims. For example, due to thenature of software, functions described above can be implemented usingsoftware executed by a processor, hardware, firmware, hardwiring, orcombinations of any of these. Features implementing functions may alsobe physically located at various positions, including being distributedsuch that portions of functions are implemented at different physicallocations. Also, as used herein, including in the claims, “or” as usedin a list of items (for example, a list of items prefaced by a phrasesuch as “at least one of” or “one or more of”) indicates an inclusivelist such that, for example, a list of at least one of A, B, or C meansA or B or C or AB or AC or BC or ABC (i.e., A and B and C). Also, asused herein, the phrase “based on” shall not be construed as a referenceto a closed set of conditions. For example, an exemplary step that isdescribed as “based on condition A” may be based on both a condition Aand a condition B without departing from the scope of the presentdisclosure. In other words, as used herein, the phrase “based on” shallbe construed in the same manner as the phrase “based at least in parton.”

Computer-readable media includes both non-transitory computer storagemedia and communication media including any medium that facilitatestransfer of a computer program from one place to another. Anon-transitory storage medium may be any available medium that can beaccessed by a general purpose or special purpose computer. By way ofexample, and not limitation, non-transitory computer-readable media cancomprise RAM, ROM, electrically erasable programmable read only memory(EEPROM), compact disk (CD) ROM or other optical disk storage, magneticdisk storage or other magnetic storage devices, or any othernon-transitory medium that can be used to carry or store desired programcode means in the form of instructions or data structures and that canbe accessed by a general-purpose or special-purpose computer, or ageneral-purpose or special-purpose processor. Also, any connection isproperly termed a computer-readable medium. For example, if the softwareis transmitted from a website, server, or other remote source using acoaxial cable, fiber optic cable, twisted pair, digital subscriber line(DSL), or wireless technologies such as infrared, radio, and microwave,then the coaxial cable, fiber optic cable, twisted pair, digitalsubscriber line (DSL), or wireless technologies such as infrared, radio,and microwave are included in the definition of medium. Disk and disc,as used herein, include CD, laser disc, optical disc, digital versatiledisc (DVD), floppy disk and Blu-ray disc where disks usually reproducedata magnetically, while discs reproduce data optically with lasers.Combinations of the above are also included within the scope ofcomputer-readable media.

The description herein is provided to enable a person skilled in the artto make or use the disclosure. Various modifications to the disclosurewill be readily apparent to those skilled in the art, and the genericprinciples defined herein may be applied to other variations withoutdeparting from the scope of the disclosure. Thus, the disclosure is notlimited to the examples and designs described herein, but is to beaccorded the broadest scope consistent with the principles and novelfeatures disclosed herein.

1. (canceled)
 2. An apparatus, comprising: a first access line coupledwith a ground reference; a plurality of second access lines; and aplurality of memory cells each coupled with the first access line and arespective second access line of the plurality of second access lines,wherein each memory cell of the plurality of memory cells comprises arespective chalcogenide component and is configured to: isolate therespective second access line from the first access line when a voltageassociated with the respective second access line is below a thresholdvoltage of the respective chalcogenide component; and couple therespective second access line with the first access line when thevoltage associated with the respective second access line exceeds thethreshold voltage of the respective chalcogenide component.
 3. Theapparatus of claim 2, wherein: the first access line is at a first levelof the apparatus; and each of the plurality of second access lines is ata second level of the apparatus above the first level.
 4. The apparatusof claim 3, further comprising: a third access line at a third level ofthe apparatus above the second level; and a second plurality of memorycells each coupled with the third access line and a second access lineof the plurality of second access lines, wherein each memory cell of thesecond plurality of memory cells comprises a respective additionalchalcogenide component, and wherein the second plurality of memory cellsare configured to: isolate the third access line from the first accessline when a voltage associated with the third access line is below asecond threshold voltage; and couple the third access line with thefirst access line when the voltage associated with the third access lineexceeds the second threshold voltage.
 5. The apparatus of claim 2,further comprising: a plurality of additional first access lines at asame level of the apparatus as the first access line, wherein each ofthe plurality of additional first access lines is isolated from theground reference by a respective gap in an interconnect layer within theapparatus.
 6. The apparatus of claim 2, wherein each second access linein the plurality of second access lines is isolated from the groundreference by a respective gap in an interconnect layer within theapparatus.
 7. The apparatus of claim 2, further comprising: anadditional second access line at a same level of the apparatus as theplurality of second access lines, wherein the additional second accessline is coupled with a driver circuit, and wherein each of the pluralityof second access lines is isolated from a respective driver circuit. 8.The apparatus of claim 2, wherein the first access line is coupled withthe ground reference by a driver circuit.
 9. The apparatus of claim 2,wherein: each memory cell of the plurality of memory cells comprises arespective storage element and a respective selection element, therespective selection element comprising the respective chalcogenidecomponent; and the respective selection element is configured as asnapback diode having the threshold voltage.
 10. The apparatus of claim2, wherein each memory cell comprises a respective self-selectingstorage element that comprises the respective chalcogenide component.11. The apparatus of claim 2, wherein: the apparatus comprises aplurality of memory tiles; and the first access line, the plurality ofsecond access lines, and the plurality of memory cells are within afirst memory tile of the plurality of memory tiles.
 12. An apparatus,comprising: a first set of access lines at a first level of theapparatus, wherein a first access line of the first set is coupled witha ground reference and a second access line of the first set is isolatedfrom the ground reference; a second set of access lines at a secondlevel of the apparatus different than the first level; and a set ofmemory cells between the first level and the second level, wherein eachmemory cell of the set of memory cells comprises a respectivechalcogenide component and is configured to: isolate the first accessline of the first set from a respective access line of the second setwhen a voltage of the respective access line of the second set is belowa threshold voltage; and couple the first access line of the first setwith the respective access line of the second set when the voltage ofthe respective access line of the second set exceeds the thresholdvoltage.
 13. The apparatus of claim 12, further comprising: at least oneadditional access line at the second level of the apparatus that iscoupled with a respective driver circuit.
 14. The apparatus of claim 12,further comprising: a driver circuit coupled with the first access lineand configured to couple the first access line with the groundreference.
 15. The apparatus of claim 12, further comprising: a thirdset of access lines at a third level of the apparatus different than thefirst level and the second level; and a second set of memory cellsbetween the second level and the third level that are coupled with anaccess line of the second set and an access line of the third set,wherein the second set of memory cells are configured to couple theaccess line of the second set with the access line of the third set whena voltage of the access line of the third set exceeds a second thresholdvoltage.
 16. The apparatus of claim 12, wherein the second access linein the first set is isolated from the ground reference by a gap in aninterconnect layer within the apparatus.
 17. The apparatus of claim 12,wherein each access line in the second set is isolated from the groundreference by a respective gap in an interconnect layer within theapparatus.
 18. The apparatus of claim 12, wherein: the apparatuscomprises a plurality of memory tiles; and the first set of accesslines, the second set of access lines, and the set of memory cells arewithin a first memory tile of the plurality of memory tiles.
 19. Anapparatus, comprising: a first metal line at a first level of theapparatus; a plurality of second metal lines at a second level of theapparatus; and a plurality of chalcogenide components each coupled withthe first metal line and a respective second metal line of the pluralityof second metal lines, wherein each chalcogenide component of theplurality of chalcogenide components is configured to: isolate therespective second metal line from the first metal line when a voltagedifferential between the respective second metal line and the firstmetal line is below a threshold voltage of the respective chalcogenidecomponent; and couple the respective second metal line with the firstmetal line when the voltage differential between the respective secondmetal line and the first metal line exceeds the threshold voltage of therespective chalcogenide component.
 20. The apparatus of claim 19,further comprising: a plurality of additional metal lines at the firstlevel of the apparatus, wherein: the first metal line is coupled with aground reference; and each of the plurality of additional metal lines isisolated from the ground reference by a respective gap in a third layerwithin the apparatus.
 21. The apparatus of claim 19, wherein: the firstmetal line extends in a first direction; and the plurality of secondmetal lines each extend in a second direction that is different than thefirst direction.